FDC6036P
Description
This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage Power Trench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.
Features
- - 5 A,
- 20 V. RDS(ON) = 44 mΩ @ VGS =
- 4.5 V RDS(ON) = 64 mΩ @ VGS =
- 2.5 V RDS(ON) = 95 mΩ @ VGS =
- 1.8 V
- Low gate charge, High Power and Current handling capability
- High performance trench technology for extremely low RDS(ON)
- FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size
Bottom Drain Contact
Applications
- Battery management/Charger Application
- Load switch
4 5 6
Bottom Drain Contact
3 2 1
MOSFET Maximum Ratings
Symbol
VDSS VGSS ID PD
TA=25o C unless otherwise noted
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1a)
Ratings
- 20 ±8
- 5
- 20 1.8...
