FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDC6036P
Manufacturer	Fairchild Semiconductor
File Size	163.92 KB
Description	P-Channel 1.8V Specified PowerTrench MOSFET
Datasheet	FDC6036P Datasheet
Additional preview pages of the FDC6036P datasheet.

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

5 A,.
20 V. RDS(ON) = 44 mΩ @ VGS =.
4.5 V RDS(ON) = 64 mΩ @ VGS =.
2.5 V RDS(ON) = 95 mΩ @ VGS =.
1.8 V.
Low gate charge, High Power and Current handling capability.
High performance trench technology for extremely low RDS(ON).
FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact.

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Published: Mar 30, 2005 |