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FDC6036P - P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process.

Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications.

Key Features

  • 5 A,.
  • 20 V. RDS(ON) = 44 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 64 mΩ @ VGS =.
  • 2.5 V RDS(ON) = 95 mΩ @ VGS =.
  • 1.8 V.
  • Low gate charge, High Power and Current handling capability.
  • High performance trench technology for extremely low RDS(ON).
  • FLMP SSOT-6 package: Enhanced thermal performance in industry-standard package size Bottom Drain Contact.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC6036P January 2004 FDC6036P P-Channel 1.8V Specified PowerTrench MOSFET General Description This dual P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. Packaged in FLMP SSOT-6, the RDS(ON) and thermal properties of the device are optimized for battery power management applications. Features • –5 A, –20 V. RDS(ON) = 44 mΩ @ VGS = –4.5 V RDS(ON) = 64 mΩ @ VGS = –2.5 V RDS(ON) = 95 mΩ @ VGS = –1.