FDC653N mosfet equivalent, n-channel mosfet.
* 5.0 A, 30 V
RDS(ON) = 0.035 W @ VGS = 10 V RDS(ON) = 0.055 W @ VGS = 4.5 V
* Proprietary SUPERSOTTM−6 Package Design Using Copper Lead
Frame for Superior Therma.
in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low i.
This N−Channel enhancement mode power field effect transistor is
produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on−state resistance. These devices are particularly suite.
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