FDC653N Datasheet (Fairchild Semiconductor)

FDC653N, N-Channel MOSFET

This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications in notebook com

FDC653N Features

* 5 A, 30 V. RDS(ON) = 0.035 Ω @ VGS = 10 V RDS(ON) = 0.055 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability