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FDC655BN - PowerTrench MOSFET

Description

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance.

Features

  • 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V.
  • Fast switching.
  • Low gate charge.
  • High performance trench technology for extremely low Rdson General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET April 2005 FDC655BN Single N-Channel, Logic Level, PowerTrench® MOSFET Features ■ 6.3 A, 30 V. RDS(ON) = 25 mΩ @ VGS = 10 V RDS(ON) = 33 mΩ @ VGS = 4.5 V ■ Fast switching ■ Low gate charge ■ High performance trench technology for extremely low Rdson General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimized on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
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