FDC6506P - Dual P-Channel Logic Level PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDC6506P
Manufacturer	Fairchild Semiconductor
File Size	204.08 KB
Description	Dual P-Channel Logic Level PowerTrench MOSFET
Datasheet	FDC6506P Datasheet
Additional preview pages of the FDC6506P datasheet.

Product details

Description

These P-Channel logic level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance.

Features

-1.8 A, -30 V. RDS(on) = 0.170 Ω @ VGS = -10 V RDS(on) = 0.280 Ω @ VGS = -4.5 V.
Low gate charge (2.3nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).

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Other Datasheets by Fairchild Semiconductor

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Published: Mar 30, 2005 |