FDC604P datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V
* Fast switching speed
* High Performance Trench.

Application

Features
* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1..

Description

This P−Channel 1.8 V specified MOSFET uses onsemi’s low voltage POWERTRENCH process. It has been optimized for battery power management applications. Features
* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) .

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