FDC604P mosfet equivalent, p-channel mosfet.
* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V
RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1.8 V
* Fast switching speed
* High Performance Trench.
Features
* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V
RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) = 60 mW @ VGS = −1..
This P−Channel 1.8 V specified MOSFET uses onsemi’s low
voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
* −5.5 A, −20 V. RDS(ON) = 33 mW @ VGS = −4.5 V
RDS(ON) = 43 mW @ VGS = −2.5 V RDS(ON) .
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