FDC608PZ datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

*
  –5.8 A,
  –20 V. RDS(ON) = 30 mW @ VGS =
  –4.5 V RDS(ON) = 43 mW @ VGS =
  –2.5 V
* Low Gate Charge <.

Application

load switching and power management, battery power circuits, and dc−dc conversions. Features
*
–5.8.

Description

This P−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are.

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