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FDC658AP - MOSFET

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process.

It has been optimized for battery power management applications.

Battery management Load switch Battery protection DC/DC conversion

Features

  • Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A.
  • Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A.
  • Low Gate Charge.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant S D D 1 PIN 1 G D D SuperSOTTM-6 2 3 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Drain-Source Voltage Parameter Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power dissipation Operating and St.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET August 2015 FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50m: General Description This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Applications „ Battery management „ Load switch „ Battery protection „ DC/DC conversion Features „ Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A „ Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.
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