FDC658AP datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* Max rDS(on) = 50 m: @ VGS = -10 V, ID = -4A
* Max rDS(on) = 75 m: @ VGS = -4.5 V, ID = -3.4A
* Low Gate Charge
* High performance trench technology for .

Application

Applications
* Battery management
* Load switch
* Battery protection
* DC/DC conversion Features
*.

Description

This P-Channel Logic Level MOSFET is produced using Fairchild's advanced PowerTrench process. It has been optimized for battery power management applications. Applications
* Battery management
* Load switch
* Battery protection
* DC/D.

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