FDC6561AN - Dual N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDC6561AN
Manufacturer	Fairchild Semiconductor
File Size	256.75 KB
Description	Dual N-Channel MOSFET
Datasheet	FDC6561AN Datasheet
Additional preview pages of the FDC6561AN datasheet.

2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well.

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Published: Mar 30, 2005 |