FDC6561AN Description
RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). small footprint (72% smaller than standard SO-8);.
FDC6561AN is Dual N-Channel MOSFET manufactured by Fairchild.
| Manufacturer | Part Number | Description |
|---|---|---|
| FDC6561AN | Dual N-Channel MOSFET |
RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). small footprint (72% smaller than standard SO-8);.