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AFGB40T65RQDN Datasheet, ON Semiconductor

AFGB40T65RQDN igbt equivalent, igbt.

AFGB40T65RQDN Avg. rating / M : 1.0 rating-11

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AFGB40T65RQDN Datasheet

Features and benefits


* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Volta.

Application

650 V, 40 A AFGB40T65RQDN Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum per.

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TAGS

AFGB40T65RQDN
IGBT
AFGB40T65SQDN
AFGB20N60SFD-BW
AFGB30T65RQDN
ON Semiconductor

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