AFGHL25T120RHD datasheet, igbt equivalent, ON Semiconductor

Features and benefits

a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and m.

Application

offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performanc.

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, wh.

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