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AFGHL25T120RHD Datasheet, ON Semiconductor

AFGHL25T120RHD igbt equivalent, igbt.

AFGHL25T120RHD Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 375.85KB)

AFGHL25T120RHD Datasheet

Features and benefits

a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and m.

Application

offering both low on state voltage and minimal switching loss, which is AEC Q101 qualified offer the optimum performanc.

Description

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop II Trench construction. Provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss, wh.

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AFGHL25T120RHD Page 1 AFGHL25T120RHD Page 2 AFGHL25T120RHD Page 3

TAGS

AFGHL25T120RHD
IGBT
ON Semiconductor

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