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AFGBG70T65SQ - IGBT

Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Coefficient for Easy Parallel Operation.
  • High Current Capability.
  • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ. ) @ IC = 70 A.
  • 100% of the Parts are Tested for ILM (Note 1).
  • Fast Switching.
  • Tight Parameter Distribution.
  • AECQ101 Qualified and PPAP Capable.

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Full PDF Text Transcription (Reference)

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IGBT - Power, Single N-Channel, Field Stop IV (FS4), High Speed, D2PAK-7L-LV 650 V, 1.55 V, 70 A AFGBG70T65SQ Using the novel field stop 4th generation IGBT technology, AFGBG70T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Coefficient for Easy Parallel Operation • High Current Capability • Low Saturation Voltage: VCE(Sat) = 1.55 V (Typ.