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AFGB30T65SQDN - IGBT

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ON Semiconductor

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AFGB30T65SQDN IGBT by ON Semiconductor - Datasheet Preview — Datasheet preview – AFGB30T65SQDN

Datasheet Details

Part number	AFGB30T65SQDN
Manufacturer	ON Semiconductor
File Size	226.78 KB
Description	IGBT
Datasheet	AFGB30T65SQDN Datasheet
Additional preview pages of the AFGB30T65SQDN datasheet.

Product details

Features

Maximum Junction Temperature: TJ = 175°C.
High Speed Switching Series.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Low VF Soft Recovery Co.
packaged Diode.
AEC.
Q101 Qualified.
100% of the Parts are Dynamically Tested (Note 1) Typical.

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Published: Oct 2, 2022 |