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AFGB20N60SFD-BW - IGBT

General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field

stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential.

Key Features

  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 2.2 V @ IC = 20 A.
  • High Input Impedance.
  • Fast Switching.
  • AEC.
  • Q101 Qualified to Automotive Requirements.
  • These Devices are Pb.
  • Free and are RoHS Compliant Typical.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Stop IGBT 600 V, 20 A Product Preview AFGB20N60SFD-BW General Description Using novel field−stop IGBT technology, ON Semiconductor’s new series of field−stop IGBTs offers the optimum performance for automotive chargers, inverters, and other applications where low conduction and switching losses are essential. Features • High Current Capability • Low Saturation Voltage: VCE(sat) = 2.