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AFGB30T65SQDN Datasheet, ON Semiconductor

AFGB30T65SQDN igbt equivalent, igbt.

AFGB30T65SQDN Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 225.55KB)

AFGB30T65SQDN Datasheet
AFGB30T65SQDN
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 225.55KB)

AFGB30T65SQDN Datasheet

Features and benefits


* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(sat) = 1.6 V (typ.) @ IC = 30 A
* Low VF Soft Recovery Co−packaged Diode

Application

650 V, 30 A, D2PAK Features
* Maximum Junction Temperature: TJ = 175°C
* High Speed Switching Series
* VCE(.

Image gallery

AFGB30T65SQDN Page 1 AFGB30T65SQDN Page 2 AFGB30T65SQDN Page 3

TAGS

AFGB30T65SQDN
IGBT
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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