AFGB30T65SQDN - IGBT

Features

Maximum Junction Temperature: TJ = 175°C.
High Speed Switching Series.
VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
Low VF Soft Recovery Co.
packaged Diode.
AEC.
Q101 Qualified.
100% of the Parts are Dynamically Tested (Note 1) Typical.

onsemi

Datasheet Details

Part number	AFGB30T65SQDN
Manufacturer	onsemi
File Size	226.78 KB
Description	IGBT
Datasheet	AFGB30T65SQDN Datasheet

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Full PDF Text Transcription

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IGBT for Automotive Applications 650 V, 30 A, D2PAK AFGB30T65SQDN Features • Maximum Junction Temperature: TJ = 175°C • High Speed Switching Series • VCE(sat) = 1.6 V (typ.

Published: Oct 2, 2022 |