AFGB30T65RQDN igbt equivalent, igbt.
* Maximum Junction Temperature: TJ = 175°C
* Positive Temperature Coefficient for Easy Parallel Operation
* High Current Capability
* Low Saturation Volta.
650 V, 30 A
AFGB30T65RQDN
Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum per.
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