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BLF6G10LS-135R Datasheet, NXP Semiconductors

BLF6G10LS-135R transistor equivalent, power ldmos transistor.

BLF6G10LS-135R Avg. rating / M : 1.0 rating-15

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BLF6G10LS-135R Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA: N Average output power = 26.5 W N Power gain .

Application

at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class.

Description

135 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f .

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BLF6G10LS-135R Page 1 BLF6G10LS-135R Page 2 BLF6G10LS-135R Page 3

TAGS

BLF6G10LS-135R
Power
LDMOS
transistor
NXP Semiconductors

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