logo

BLF6G10L-40BRN Datasheet, NXP Semiconductors

BLF6G10L-40BRN transistor equivalent, power ldmos transistor.

BLF6G10L-40BRN Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 327.49KB)

BLF6G10L-40BRN Datasheet
BLF6G10L-40BRN
Avg. rating / M : 1.0 rating-13

datasheet Download (Size : 327.49KB)

BLF6G10L-40BRN Datasheet

Features and benefits


* Typical 2-carrier W-CDMA performance at frequencies of 791 MHz and 821 MHz, a supply voltage of 28 V and an IDq of 360 mA: ‹ Average output power (PL(AV)) = 2.5 W ‹.

Application

at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB.

Description

40 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA[1] [1] f (.

Image gallery

BLF6G10L-40BRN Page 1 BLF6G10L-40BRN Page 2 BLF6G10L-40BRN Page 3

TAGS

BLF6G10L-40BRN
Power
LDMOS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

Related datasheet

BLF6G10LS-135R

BLF6G10LS-200

BLF6G10LS-200R

BLF6G10LS-200RN

BLF6G10-200RN

BLF6G10-45

BLF6G10S-45

BLF6G13L-250P

BLF6G13LS-250P

BLF6G13LS-250PG

BLF6G15L-500H

BLF6G15LS-250PBRN

BLF6G15LS-500H

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts