Download the BLF6G10LS-200RN datasheet PDF.
This datasheet also covers the BLF6G10-200RN variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Table 1.
Typical RF performance at Tcase = 25 C in a class-AB production test circuit.
Key Features
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
Full PDF Text Transcription for BLF6G10LS-200RN (Reference)
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BLF6G10LS-200RN. For precise diagrams, and layout, please refer to the original PDF.
BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 3 — 1 September 2015 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor...
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. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D (MHz) (V) (W) (dB) (%) 2-carrier W-CDMA 869 to 894 28 40 20 28.5 ACPR (dBc) 39[1] [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
BLF6G10LS-200RN Datasheet
