BLF6G10-45 - Power LDMOS Transistor

NXP Semiconductors

Datasheet Details

45 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1.

Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

www.DataSheet4U.com BLF6G10-45 Power LDMOS transistor Rev.

01 — 3 February 2009 Product data sheet 1.

Product proﬁle 1.

I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 350 mA: N Average output power = 1.0 W N Gain = 22.5 dB N Efﬁciency = 7.8 % N ACPR =.
48.5 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding restriction of hazar.

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