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BLF6G10LS-200R Datasheet, NXP Semiconductors

BLF6G10LS-200R transistor equivalent, power ldmos transistor.

BLF6G10LS-200R Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 135.33KB)

BLF6G10LS-200R Datasheet
BLF6G10LS-200R Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 135.33KB)

BLF6G10LS-200R Datasheet

Features and benefits

I Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain =.

Application

at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class.

Description

200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f .

Image gallery

BLF6G10LS-200R Page 1 BLF6G10LS-200R Page 2 BLF6G10LS-200R Page 3

TAGS

BLF6G10LS-200R
Power
LDMOS
transistor
NXP Semiconductors

Manufacturer


NXP (https://www.nxp.com/) Semiconductors

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