PMV65XPEA mosfet equivalent, p-channel trench mosfet.
* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 890 mW
* ElectroStatic Discharge (ESD) protection 2 kV HB.
* Relay driver
* High speed line driver
* High-side loadswitch
* Switching circuits
4. Quick reference .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Trench MOSFET technology
* Very fast switching
*.
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