PMV65XPEA datasheet, mosfet equivalent, nexperia

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datasheet Download (Size : 697.58KB)

Features and benefits

* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 890 mW
* ElectroStatic Discharge (ESD) protection 2 kV HB.

Application

* Relay driver
* High speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Very fast switching
*.

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