PMV65UNEA
PMV65UNEA is N-channel MOSFET manufactured by Nexperia.
20 V, N-channel Trench MOSFET
17 March 2017
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 940 m W
- Electro Static Discharge (ESD) protection > 2KV HBM
- AEC-Q101 qualified
3. Applications
- LED driver
- Power management
- Low-side loadswitch
- Switching circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
VDS drain-source voltage
VGS gate-source voltage
ID drain current
Static characteristics
RDSon drain-source on-state resistance
Conditions Tj = 25 °C Tj = 25 °C; Tamb = 25 °C VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; ID = 2.8 A; Tj = 25 °C
Min Typ Max
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