PMV65UNEA
Overview
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
- Trench MOSFET technology
- Low threshold voltage
- Enhanced power dissipation capability of 940 mW
- ElectroStatic Discharge (ESD) protection > 2KV HBM
- AEC-Q101 qualified
