* Trench MOSFET technology
* Low threshold voltage
* Enhanced power dissipation capability of 940 mW
* ElectroStatic Discharge (ESD) protection > 2KV HBM .

* LED driver
* Power management
* Low-side loadswitch
* Switching circuits 4. Quick reference data Tab.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Low threshold voltage

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