* Trench MOSFET technology
* Very fast switching
* Enhanced power dissipation capability: Ptot = 890 mW
* ElectroStatic Discharge (ESD) protection 2 kV HB.

* Relay driver
* High speed line driver
* High-side loadswitch
* Switching circuits 4. Quick reference .

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits
* Trench MOSFET technology
* Very fast switching
*.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts