PMV117EN
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS™ technology.
1.2 Features s Logic level threshold s Subminiature surface-mounted package s Very fast switching
1.3 Applications s Battery management s High-speed switch s Low power DC-to-DC converter
1.4 Quick reference data s VDS ≤ 30 V s RDSon ≤ 117 mΩ (VGS = 10 V) s ID ≤ 2.5 A s Ptot ≤ 0.83 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
Simplified outline
Symbol
SOT23 mbb076
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Philips Semiconductors
µTrench MOS™ enhanced logic level FET
3. Ordering information
Table 2: Ordering information Package Name PMV117EN TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source...
