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PMV65XP - P-channel MOSFET

General Description

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Low threshold voltage.
  • Low on-state resistance.
  • Trench MOSFET technology 3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PMV65XP 20 V, single P-channel Trench MOSFET 12 February 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology 3. Applications • Low power DC-to-DC converters • Load switching • Battery management • Battery powered portable equipment 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -4.5 V; Tsp = 25 °C VGS = -4.5 V; ID = -2.