Datasheet4U Logo Datasheet4U.com

PMV65ENEA - N-channel MOSFET

General Description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2.

Key Features

  • Logic-level compatible.
  • Very fast switching.
  • Trench MOSFET technology.
  • Electrostatic Discharge (ESD) protection > 2 kV HBM.
  • AEC-Q101 qualified 3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PMV65XP P-channel TrenchMOS extremely low level FET NXP
PMV65XPEA P-channel Trench MOSFET NXP
PMV60EN UTrenchMOS enhanced logic level FET NXP
PMV117EN uTrenchMOS enhanced logic level FET NXP
PMV117EN N-Channel MOSFET VBsemi

Other Datasheets by Nexperia

Part Number Description
PMV65UNE N-channel MOSFET
PMV65UNEA N-channel MOSFET
PMV65XP P-channel MOSFET
PMV65XPE P-channel MOSFET
PMV65XPEA P-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PMV65ENEA 40 V, N-channel Trench MOSFET 28 April 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology • Electrostatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4. Quick reference data Table 1.