PHK18NQ03LT fet equivalent, n-channel trenchmos logic level fet.
* High efficiency due to low switching and conduction losses
* Suitable for logic level gate drive sources
1.3 Applications
* DC-to-DC converters
* Noteb.
only.
1.2 Features and benefits
* High efficiency due to low switching and conduction losses
* Suitable for log.
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feature.
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