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PHK31NQ03LT Datasheet

N-channel TrenchMOS logic level FET

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PHK31NQ03LT
N-channel TrenchMOS logic level FET
Rev. 01 — 18 December 2006
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology.
1.2 Features
I Optimized for use in DC-to-DC
converters
I Logic level compatible
I Very low switching and conduction
losses
1.3 Applications
I DC-to-DC converters
I Voltage regulators
I Switched-mode power supplies
I Notebook computers
1.4 Quick reference data
I VDS 30 V
I RDSon 4.4 m
I ID 30.4 A
I QGD = 7.7 nC (typ)
2. Pinning information
Table 1.
Pin
1, 2, 3
4
5, 6, 7, 8
Pinning
Description
source (S)
gate (G)
drain (D)
Simplified outline
85
14
SOT96-1 (SO8)
Symbol
D
G
mbb076 S
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NXP Semiconductors Electronic Components Datasheet

PHK31NQ03LT Datasheet

N-channel TrenchMOS logic level FET

No Preview Available !

NXP Semiconductors
PHK31NQ03LT
N-channel TrenchMOS logic level FET
3. Ordering information
Table 2. Ordering information
Type number
Package
Name
Description
PHK31NQ03LT
SO8
plastic small outline package; 8 leads; body width 3.9 mm
4. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage (DC)
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tsp = 25 °C; VGS = 10 V; see Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; see Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; see Figure 3
Tsp = 25 °C; see Figure 1
IS source current
ISM peak source current
Avalanche ruggedness
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp 10 µs
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load; ID = 35 A;
tp = 0.16 ms; VDS 25 V; RGS = 50 ;
VGS = 10 V; starting at Tj = 25 °C
Min
-
-
-
-
-
-
-
55
55
-
-
-
Version
SOT96-1
Max
30
30
±20
30.4
17.2
121.8
6.9
+150
+150
Unit
V
V
V
A
A
A
W
°C
°C
5.7 A
23.1 A
120 mJ
PHK31NQ03LT_1
Product data sheet
Rev. 01 — 18 December 2006
© NXP B.V. 2006. All rights reserved.
2 of 12
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Part Number PHK31NQ03LT
Description N-channel TrenchMOS logic level FET
Maker NXP
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