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PHK18NQ03LT - N-channel TrenchMOS logic level FET

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features

  • High efficiency due to low switching and conduction losses.
  • Suitable for logic level gate drive sources 1.3.

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Full PDF Text Transcription

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SO 8 PHK18NQ03LT N-channel TrenchMOS logic level FET Rev. 03 — 17 March 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits „ High efficiency due to low switching and conduction losses „ Suitable for logic level gate drive sources 1.3 Applications „ DC-to-DC converters „ Notebook computers „ Switched-mode power supplies „ Voltage regulators 1.4 Quick reference data Table 1.
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