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PHKD13N03LT
Dual N-channel TrenchMOS logic level FET
Rev. 5 — 27 December 2011
Product data sheet
1. Product profile
1.1 General description
Dual logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Simple gate drive required due to low gate charge
Suitable for high frequency applications due to fast switching characteristics
1.3 Applications
DC-to-DC convertors Lithium-ion battery applications
Notebook computers Portable equipment
1.4 Quick reference data
Table 1.
PHKD13N03LT Datasheet
