PHK4NQ10T
FEATURES
- Low on-state resistance
- Fast switching
- Low profile surface mount package
SYMBOL d
QUICK REFERENCE DATA VDS = 100 V ID = 4 A g
RDS(ON) ≤ 70 mΩ (VGS = 10 V) s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- Motor and relay drivers
- d.c. to d.c. converters The PHK4NQ10T is supplied in the SOT96-1 (SO8) surface mounting package.
PINNING
PIN 1-3 4 5-8 DESCRIPTION source gate drain
SOT96-1 (SO8)
8 7 6 5 pin 1 index
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDSS VDGR VGS ID IDM Ptot Tj, Tstg PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (tp ≤ 10 s) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ta = 25 ˚C Ta = 70 ˚C Ta = 25 ˚C Ta = 25 ˚C, t ≤ 10 s Ta = 70 ˚C, t ≤ 10...
