PHK4NQ10T Datasheet | NXP Semiconductors

Philips Semiconductors Product specification N-channel TrenchMOSTM transistor PHK4NQ10T Features - Low on-state resistance - Fast switching - Low profile surface mount package SYMBOL d QUICK REFERENCE DATA VDS = 100 V ID = 4 A g RDS(ON) ≤ 70 mΩ (VGS = 10 V) s GENERAL DESCRIPTION N-channel enhancement mode field-effect transistor in a plastic envelope using ’trench’ technology. Applications:- Motor and relay drivers - d.c. to d.c. converters The PHK4NQ10T is supplied in the SOT96-1 (SO8) surface mounting package. PINNING PIN 1-3 4 5-8 DESCRIPTION source gate drain SOT96-1 (SO8) 8 7 6 5 pin 1 index 1 2 3 4 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDSS VDGR VGS ID IDM Ptot Tj, Tstg PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (tp ≤ 10 s) Drain current (pulse peak value) Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Ta = 25 ˚C Ta = 70 ˚C Ta = 25 ˚C Ta = 25 ˚C, t ≤ 10 s Ta = 70 ˚C, t ≤ 10 s MIN. - 65 MAX. 100 100 ± 20 4 3 16 2.5 1.6 150 UNIT V V V A A A W W ˚C THERMAL RESISTANCES SYMBOL PARAMETER Rth j-a Rth j-a Thermal resistance junction to ambient Thermal resistance junction to ambient CONDITIONS Surface mounted, FR4 board, t ≤ 10 sec Surface mounted, FR4 board TYP. 150 MAX. 50 UNIT K/W K/W August 1999 1 Rev 1.000...