900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

PHK04P02T Datasheet

P-channel vertical D-MOS logic level FET

No Preview Available !

PHK04P02T
P-channel vertical D-MOS logic level FET
Rev. 02 — 14 December 2010
Product data sheet
1. Product profile
1.1 General description
Logic level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using vertical D-MOS technology. This product is designed and qualified for use
in computing, communications, consumer and industrial applications only.
1.2 Features and benefits
„ Suitable for high frequency
applications due to fast switching
characteristics
„ Suitable for logic level gate drive
sources
„ Suitable for very low gate drive
sources voltage
1.3 Applications
„ Battery powered applications
„ High-speed digital interfaces
1.4 Quick reference data
Table 1.
Symbol
VDS
ID
Quick reference data
Parameter
drain-source voltage
drain current
Conditions
Tj 25 °C; Tj 150 °C
Tsp = 25 °C
Ptot total power
dissipation
Static characteristics
RDSon
drain-source on-state
resistance
Dynamic characteristics
VGS = -2.5 V; ID = -1 A; Tj = 25 °C
VGS = -4.5 V; ID = -1 A; Tj = 25 °C
QGD
gate-drain charge
VGS = -4.5 V; ID = -1 A;
VDS = -10 V; Tj = 25 °C
Min Typ Max Unit
- - -16 V
- - -4.6 A
6
- - 5W
- 117 150 m
- 80 120 m
- 1.83 - nC
Free
Datasheet


NXP Semiconductors Electronic Components Datasheet

PHK04P02T Datasheet

P-channel vertical D-MOS logic level FET

No Preview Available !

NXP Semiconductors
PHK04P02T
P-channel vertical D-MOS logic level FET
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
7
8
Pinning information
Symbol Description
S source
S source
S source
G gate
D drain
D drain
D drain
D drain
3. Ordering information
Simplified outline
85
14
SOT96-1 (SO8)
Graphic symbol
D
G
S
001aaa025
Table 3. Ordering information
Type number
Package
Name
PHK04P02T
SO8
4. Limiting values
Description
plastic small outline package; 8 leads; body width 3.9 mm
Version
SOT96-1
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
Tj 25 °C; Tj 150 °C
RGS = 20 k
Tsp = 100 °C
Tsp = 25 °C
Tsp = 25 °C; pulsed
Tsp = 25 °C
Tsp = 100 °C
IS source current
ISM peak source current
Tsp = 25 °C
Tsp = 25 °C; pulsed; tp 5 s
Min Max Unit
- -16 V
- -16 V
-8 8
V
- -1.87 A
- -4.66 A
- -26.4 A
- 5W
- 2W
-55 150 °C
-55 150 °C
- -4.66 A
- -26 A
PHK04P02T
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 14 December 2010
© NXP B.V. 2010. All rights reserved.
2 of 12
Free Datasheet http://www.datasheet4u.co


Part Number PHK04P02T
Description P-channel vertical D-MOS logic level FET
Maker NXP
PDF Download

PHK04P02T Datasheet PDF






Similar Datasheet

1 PHK04P02T P-channel vertical D-MOS logic level FET
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy