PHK28NQ03LT
PHK28NQ03LT is TrenchMOS logic level FET manufactured by NXP Semiconductors.
Description
N-channel enhancement mode field-effect transistor in a plastic package using Trench MOS™ technology. Product availability: PHK28NQ03LT in SOT96-1 (SO8).
1.2 Features s Logic level patible s Low gate charge.
1.3 Applications s DC to DC converters s Switched mode power supplies.
1.4 Quick reference data s VDS ≤ 30 V s Ptot ≤ 6.25 W s ID ≤ 23.7 A s RDSon ≤ 6.5 mΩ.
2. Pinning information
Table 1: Pin 1,2,3 4 5,6,7,8 Pinning
- SOT96-1 simplified outline and symbol Description source (s) gate (g) drain (d) g 1 Top view 4
MBK187
Simplified outline
8 5
Symbol d
MBB076 s
SOT96-1 (SO8)
Free Datasheet http://../
Philips Semiconductors
Trench MOS™ logic level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 Conditions 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Min
- 55
- 55 Max 30 30 20 23.7 15 60 6.25 +150 +150 5.2 20.8 Unit V V V A A A W °C °C A A
Source-drain diode
9397 750 10743
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01
- 12 December 2002
2 of 12
Free Datasheet http://../
Philips Semiconductors
Trench MOS™ logic level FET
120 Pder (%) 80
03aa17
120 Ider (%) 80
03aa25
0 0 50 100 150 Tsp (°C) 200
0 0 50 100 150 200 Tsp (°C)
P tot P der = ---------------------- × 100 % P ° tot ( 25 C...
