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PHK28NQ03LT Datasheet

TrenchMOS logic level FET

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PHK28NQ03LT
TrenchMOS™ logic level FET
M3D315 Rev. 01 — 12 December 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
Product availability:
PHK28NQ03LT in SOT96-1 (SO8).
1.2 Features
s Logic level compatible
s Low gate charge.
1.3 Applications
s DC to DC converters
s Switched mode power supplies.
1.4 Quick reference data
s VDS 30 V
s Ptot 6.25 W
s ID 23.7 A
s RDSon 6.5 m.
2. Pinning information
Table 1: Pinning - SOT96-1 simplified outline and symbol
Pin Description
Simplified outline
1,2,3
4
source (s)
gate (g)
85
5,6,7,8 drain (d)
1
Top view
4
MBK187
SOT96-1 (SO8)
Symbol
d
g
MBB076
s
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NXP Semiconductors Electronic Components Datasheet

PHK28NQ03LT Datasheet

TrenchMOS logic level FET

No Preview Available !

Philips Semiconductors
PHK28NQ03LT
TrenchMOS™ logic level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
25 °C Tj 150 °C
25 °C Tj 150 °C; RGS = 20 k
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp 10 µs; Figure 3
Tsp = 25 °C; Figure 1
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp 10 µs
Min Max Unit
- 30 V
- 30 V
- 20 V
- 23.7 A
- 15 A
- 60 A
- 6.25 W
55 +150 °C
55 +150 °C
- 5.2 A
- 20.8 A
9397 750 10743
Product data
Rev. 01 — 12 December 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 12
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Part Number PHK28NQ03LT
Description TrenchMOS logic level FET
Maker NXP
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