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NXP Semiconductors Electronic Components Datasheet

PBSS5350T Datasheet

50 V/ 3 A PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS5350T
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2002 Aug 08
2004 Jan 13


NXP Semiconductors Electronic Components Datasheet

PBSS5350T Datasheet

50 V/ 3 A PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
50 V, 3 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5350T
FEATURES
Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
High collector current capability
High collector current gain
Improved efficiency due to reduced heat generation.
APPLICATIONS
Power management applications
Low and medium power DC/DC convertors
Supply line switching
Battery chargers
Linear voltage regulation with low voltage drop-out
(LDO).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICRP
collector-emitter voltage
collector current (DC)
repetitive peak collector
current
RCEsat
equivalent on-resistance
MAX. UNIT
50 V
2 A
3 A
135 m
PINNING
PIN
1 base
2 emitter
3 collector
DESCRIPTION
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4350T.
MARKING
TYPE NUMBER
PBSS5350T
MARKING CODE(1)
ZD*
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
handbook, halfpage
3
1
Top view
1
2
MAM256
3
2
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPENUMBER
PBSS5350T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2004 Jan 13
2


Part Number PBSS5350T
Description 50 V/ 3 A PNP low VCEsat (BISS) transistor
Maker NXP
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PBSS5350T Datasheet PDF






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