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PBSS5350T - 50 V/ 3 A PNP low VCEsat (BISS) transistor

General Description

PNP low VCEsat transistor in a SOT23 plastic package.

NPN complement: PBSS4350T.

MARKING TYPE NUMBER PBSS5350T Note 1.

= p: Made in Hong Kong.

= t: Made in Malaysia.

= W: Made in China.

DESCRIPTION plastic surface mou

Key Features

  • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
  • High collector current capability.
  • High collector current gain.
  • Improved efficiency due to reduced heat generation.

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Full PDF Text Transcription (Reference)

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DISCRETE SEMICONDUCTORS DATA SHEET PBSS5350T 50 V, 3 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2002 Aug 08 2004 Jan 13 Philips Semiconductors Product specification 50 V, 3 A PNP low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat • High collector current capability • High collector current gain • Improved efficiency due to reduced heat generation. APPLICATIONS • Power management applications • Low and medium power DC/DC convertors • Supply line switching • Battery chargers • Linear voltage regulation with low voltage drop-out (LDO). DESCRIPTION PNP low VCEsat transistor in a SOT23 plastic package. NPN complement: PBSS4350T. MARKING TYPE NUMBER PBSS5350T Note 1. * = p: Made in Hong Kong.