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PBSS5350D - PNP transistor

General Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High current capability.
  • High efficiency due to less heat generation.
  • AEC-Q101 qualified.
  • Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PBSS5350D 50 V, 3 A PNP low VCEsat (BISS) transistor Rev. 6 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits  Low collector-emitter saturation voltage VCEsat  High current capability  High efficiency due to less heat generation  AEC-Q101 qualified  Smaller Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications  Supply line switching circuits  Battery management applications  DC-to-DC conversion 1.4 Quick reference data Table 1.