PBSS5350D datasheet, transistor equivalent, nexperia

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datasheet Download (Size : 817.75KB)

Features and benefits

* Low collector-emitter saturation voltage VCEsat
* High current capability
* High efficiency due to less heat generation
* AEC-Q101 qualified
* Smal.

Application

* Supply line switching circuits
* Battery management applications
* DC-to-DC conversion 1.4 Quick referen.

Description

PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4350D 1.2 Features and benefits
* Low collector-emitter saturation voltage VCEsat
* Hig.

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