PBSS5350T - 50 V/ 3 A PNP low VCEsat (BISS) transistor

NXP

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Datasheet Details

Part number	PBSS5350T
Manufacturer	NXP
File Size	86.21 KB
Description	50 V/ 3 A PNP low VCEsat (BISS) transistor
Datasheet	PBSS5350T_PhilipsSemiconductors.pdf

PBSS5350T Product details

Description

PNP low VCEsat transistor in a SOT23 plastic package. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. DESCRIPTION plastic surface mounted package; 3 leads MARKING CODE(1) ZD Top view handbook, halfpage PBSS5350T QUICK REFERENCE DATA SYMBOL VCEO IC ICRP RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER coll

Features

Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat.
High collector current capability.
High collector current gain.
Improved efficiency due to reduced heat generation.

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Published: Mar 22, 2005 |