PBSS5350T Datasheet (NXP) - 50 V/ 3 A PNP low VCEsat (BISS) transistor

PBSS5350T, 50 V/ 3 A PNP low VCEsat (BISS) transistor

PNP low VCEsat transistor in a SOT23 plastic package.

NPN complement: PBSS4350T.

MARKING TYPE NUMBER PBSS5350T Note 1.

* = p: Made in Hong Kong.

* = t: Made in Malaysia.

* = W: Made in China.

ORDERING INFORMATION PACKAGE TYPENUMBER NAME PBSS5350T * DESCRIPTION plastic surface mou

PBSS5350T Features

* Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat

* High collector current capability

* High collector current gain

* Improved efficiency due to reduced heat generation. APPLICATIONS

* Power management applications

* Low an