PBSS5350TH Overview
Key Specifications
Description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
Key Features
- Low collector-emitter saturation voltage VCEsat
- High collector current capability: IC and ICM
- High collector current gain (hFE) at high IC
- Higher efficiency leading to less heat genereation
- High temperature applications up to 175 °C
