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NXP Semiconductors Electronic Components Datasheet

PBSS5350D Datasheet

PNP transistor

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PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 — 28 June 2011
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBSS4350D
1.2 Features and benefits
Low collector-emitter saturation
voltage VCEsat
High current capability
High efficiency due to less heat
generation
AEC-Q101 qualified
Smaller Printed-Circuit Board (PCB)
area than for conventional transistors
1.3 Applications
Supply line switching circuits
Battery management applications
DC-to-DC conversion
1.4 Quick reference data
Table 1.
Symbol
VCEO
IC
ICM
RCEsat
Quick reference data
Parameter
collector-emitter
voltage
collector current
peak collector current
collector-emitter
saturation resistance
Conditions
open base
IC = -2 A; IB = -200 mA; pulsed;
tp 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
Min Typ Max Unit
- - -50 V
- - -3 A
- - -5 A
- 120 150 m


NXP Semiconductors Electronic Components Datasheet

PBSS5350D Datasheet

PNP transistor

No Preview Available !

NXP Semiconductors
PBSS5350D
50 V, 3 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning information
Symbol Description
C collector
C collector
B base
E emitter
C collector
C collector
3. Ordering information
Simplified outline
654
123
SOT457 (TSOP6)
Graphic symbol
1, 2, 5, 6
3
4
sym030
Table 3. Ordering information
Type number
Package
Name
PBSS5350D
TSOP6
4. Marking
Description
plastic surface-mounted package (TSOP6); 6 leads
Version
SOT457
Table 4. Marking codes
Type number
PBSS5350D
Marking code
53
PBSS5350D
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 6 — 28 June 2011
© NXP B.V. 2011. All rights reserved.
2 of 12


Part Number PBSS5350D
Description PNP transistor
Maker NXP
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PBSS5350D Datasheet PDF






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