PBSS5350SS Datasheet | NXP Semiconductors

PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 - 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS5350SS SOT96-1 Name SO8 NPN/PNP plement PBSS4350SPN NPN/NPN plement PBSS4350SS Type number 1.2 Features I I I I I .. Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g. motors, fans) I Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = - 2 A; IB = - 200 mA [1] Symbol Parameter Per transistor VCEO IC ICM RCEsat [1] Min - Typ 95 Max - 50 - 2.7 - 5 140 Unit V A A mΩ collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Pulse test: tp ≤ 300 µs; δ ≤ 0.02....