Datasheet4U Logo Datasheet4U.com

PBSS5350SS - PNP/PNP low VCEsat (BISS) transistor

Description

PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package.

Table 1.

Features

  • I I I I I www. DataSheet4U. com Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS5350SS PNP/PNP transistor nexperia
PBSS5350D PNP transistor nexperia
PBSS5350T Silicon PNP transistor BLUE ROCKET ELECTRONICS
PBSS5350TH PNP transistor nexperia
PBSS5350X Silicon PNP transistor BLUE ROCKET ELECTRONICS

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS5350S 50 V low VCEsat PNP transistor
PBSS5350D PNP transistor
PBSS5350T 50 V/ 3 A PNP low VCEsat (BISS) transistor
PBSS5350X PNP Transistor
PBSS5320D PNP transistor

Full PDF Text Transcription

Click to expand full text
PBSS5350SS 50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor Rev. 01 — 3 April 2007 Product data sheet 1. Product profile 1.1 General description PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS5350SS SOT96-1 Name SO8 NPN/PNP complement PBSS4350SPN NPN/NPN complement PBSS4350SS Type number 1.2 Features I I I I I www.DataSheet4U.com Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I Dual low power switches (e.g.
Published: |