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PBSS5350SS Datasheet Preview

PBSS5350SS Datasheet

PNP/PNP transistor

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PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
Rev. 01 — 3 April 2007
Product data sheet
1. Product profile
1.1 General description
PNP/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium
power Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number Package
Nexperia
PBSS5350SS SOT96-1
Name
SO8
NPN/PNP
complement
PBSS4350SPN
NPN/NPN
complement
PBSS4350SS
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I Dual low power switches (e.g. motors, fans)
I Automotive
1.4 Quick reference data
Table 2. Quick reference data
Symbol Parameter
Per transistor
VCEO
IC
ICM
collector-emitter voltage
collector current
peak collector current
RCEsat collector-emitter
saturation resistance
[1] Pulse test: tp 300 µs; δ ≤ 0.02.
Conditions
open base
single pulse;
tp 1 ms
IC = 2 A;
IB = 200 mA
Min Typ Max
Unit
- - 50 V
- - 2.7 A
- - 5 A
[1] -
95 140 m




nexperia

PBSS5350SS Datasheet Preview

PBSS5350SS Datasheet

PNP/PNP transistor

No Preview Available !

Nexperia
PBSS5350SS
50 V, 2.7 A PNP/PNP low VCEsat (BISS) transistor
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
7
8
Pinning
Description
emitter TR1
base TR1
emitter TR2
base TR2
collector TR2
collector TR2
collector TR1
collector TR1
Simplified outline Symbol
8 5 8765
TR1 TR2
1 4 1234
006aaa976
3. Ordering information
Table 4. Ordering information
Type number Package
Name
Description
PBSS5350SS SO8
plastic small outline package; 8 leads; body width
3.9 mm
Version
SOT96-1
4. Marking
Table 5. Marking codes
Type number
PBSS5350SS
Marking code
5350SS
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Per transistor
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
total power dissipation
open emitter
open base
open collector
single pulse;
tp 1 ms
Tamb 25 °C
-
-
-
-
-
-
[1] -
[2] -
[3] -
Max Unit
50 V
50 V
5 V
2.7 A
5 A
0.5 A
0.55 W
0.87 W
1.43 W
PBSS5350SS_1
Product data sheet
Rev. 01 — 3 April 2007
© Nexperia B.V. 2017. All rights reserved
2 of 14


Part Number PBSS5350SS
Description PNP/PNP transistor
Maker nexperia
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