PBSS5250T - PNP low VCEsat (BISS) transistor

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NXP

PBSS5250T PNP low VCEsat (BISS) transistor by NXP - Datasheet Preview — Datasheet preview – PBSS5250T

Datasheet Details

Part number	PBSS5250T
Manufacturer	NXP
File Size	75.70 KB
Description	PNP low VCEsat (BISS) transistor
Datasheet	PBSS5250T Datasheet
Additional preview pages of the PBSS5250T datasheet.

Product details

Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX. 50 2 3 150 UNIT V A A mΩ 3 3 1 DESCRIPTION PNP BISS transistor in a SOT23 plastic package offering ultra low VCEsat and RCEsat parameters.MARKING TYPE NUMBER PBSS5250T Note 1. = p: Made in Hong Kong. = t: Made in Malaysia. = W: Made in China. DESCRIPTION plastic surface mou

Features

Low collector-emitter saturation voltage VCEsat.
High collector current capability: IC and ICM.
Higher efficiency leading to less heat generation.
Reduced printed-circuit board requirements.
Cost effective alternative to MOSFETs in specific.

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Published: Oct 8, 2007 |