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NXP Semiconductors Electronic Components Datasheet

PBSS5250T Datasheet

PNP low VCEsat (BISS) transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
ge
M3D088
PBSS5250T
50 V, 2 A
PNP low VCEsat (BISS) transistor
Product specification
2003 Oct 09


NXP Semiconductors Electronic Components Datasheet

PBSS5250T Datasheet

PNP low VCEsat (BISS) transistor

No Preview Available !

Philips Semiconductors
50 V, 2 A
PNP low VCEsat (BISS) transistor
Product specification
PBSS5250T
FEATURES
Low collector-emitter saturation voltage VCEsat
High collector current capability: IC and ICM
Higher efficiency leading to less heat generation
Reduced printed-circuit board requirements
Cost effective alternative to MOSFETs in specific
applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VCEO
IC
ICM
RCEsat
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
PINNING
MAX. UNIT
50 V
2 A
3 A
150 m
APPLICATIONS
Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting
Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
– Inductive load driver (e.g. relays, buzzers and motors).
PIN
1 base
2 emitter
3 collector
DESCRIPTION
handbook, halfpage
3
1
3
DESCRIPTION
PNP BISS transistor in a SOT23 plastic package offering
ultra low VCEsat and RCEsat parameters.
1
Top view
2
MAM256
2
MARKING
TYPE NUMBER
PBSS5250T
MARKING CODE(1)
3H*
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PBSS5250T
NAME
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
2003 Oct 09
2


Part Number PBSS5250T
Description PNP low VCEsat (BISS) transistor
Maker NXP
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PBSS5250T Datasheet PDF






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