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PBSS2540M - 0.5 A NPN low VCEsat (BISS) transistor

General Description

PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Key Features

  • Low collector-emitter saturation voltage VCEsat.
  • High collector current capability IC and ICM.
  • High efficiency leading to reduced heat generation.
  • Reduced printed-circuit board requirements.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product specification 2003 Jul 22 DataSheet 4 U .com www.DataSheet4U.com Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. APPLICATIONS • Power management: – DC-DC converter – Supply line switching – Battery charger – LCD backlighting. • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors).