Datasheet4U Logo Datasheet4U.com

PBSS2540F - 40 V low V NPN transistor

Description

QUICK REFERENCE DATA SYMBOL VCEO IC ICM RCEsat PINNING PIN 1 2 3 base emitter collector DESCRIPTION PARAMETER collector-emitter voltage collector current (DC) peak collector current equivalent on-resistance MAX.

Features

  • Low collector-emitter saturation voltage.
  • High current capability.
  • Improved thermal behaviour due to flat leads.
  • Enhanced performance over SOT23 general purpose transistors.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PBSS2540M NPN transistor nexperia
PBSS2540M-Q 40V 0.5A NPN low VCEsat transistor nexperia
PBSS2540MB NPN transistor nexperia
PBSS2515M NPN transistor nexperia
PBSS2515MB NPN transistor nexperia

Other Datasheets by NXP Semiconductors

Part Number Description
PBSS2540E 500 mA NPN low VCEsat (BISS) transistor
PBSS2540M 0.5 A NPN low VCEsat (BISS) transistor
PBSS2515E 0.5A NPN transistor
PBSS2515F low VCEsat NPN transistor
PBSS2515VPN NPN/PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS2540F 40 V low VCEsat NPN transistor Product specification 2001 Oct 31 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved thermal behaviour due to flat leads • Enhanced performance over SOT23 general purpose transistors. APPLICATIONS • General purpose switching and muting • Low frequency driver circuits • Audio frequency general purpose amplifier applications • Battery driven equipment (mobile phones, video cameras, hand-held devices).
Published: |