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BUK9840-55 - N-channel TrenchMOS logic level FET

General Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • AEC Q101 compliant.
  • Electrostatically robust due to integrated protection diodes.
  • Low conduction losses due to low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

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SOT223 BUK9840-55 N-channel TrenchMOS logic level FET Rev. 03 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits  AEC Q101 compliant  Electrostatically robust due to integrated protection diodes  Low conduction losses due to low on-state resistance 1.3 Applications  Automotive and general purpose power switching 1.4 Quick reference data Table 1.