I I I I Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 3 kV 1.3 Applications I I I I Relay driver High-speed line driver Low-si.

I I I I Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Sy.

ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features I I I I Logic-level compatible Very fast switching Trench MO.

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