2N7002CK
description
ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features
I Logic-level patible I Very fast switching I Trench MOSFET technology I ESD protection up to 3 k V
1.3 Applications
I Relay driver I High-speed line driver I Low-side loadswitch I Switching circuits
1.4 Quick reference data
Table 1. Symbol VDS ID IDM
Quick reference data Parameter drain-source voltage drain current peak drain current
RDSon drain-source on-state resistance
Conditions single pulse; tp ≤ 10 µs VGS = 10 V; ID = 500 m A
Min Typ Max Unit
- - 60 V
- - 300 m A
- - 1.2 A
- 1.1 1.6 Ω
Nexperia
2. Pinning information
Table 2. Pin 1 2 3
Pinning Symbol G S D
Description gate source drain
60 V, 0.3 A N-channel Trench MOSFET
Simplified outline Graphic symbol
3D 1 2G
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
2N700...
