2N7002BKS
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
- Logic-level patible
- Very fast switching
- Trench MOSFET technology
- ESD protection up to 2 k V
- AEC-Q101 qualified
1.3 Applications
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min Typ Max Unit
VDS VGS ID
RDSon drain-source voltage gate-source voltage drain current drain-source on-state resistance
Tamb = 25 °C
Tamb = 25 °C
Tamb = 25 °C; VGS = 10 V
Tj = 25 °C; VGS = 10 V; ID = 500 m A
- - 60 V
- - ±20 V [1]
- - 300 m A
- 1 1.6 Ω
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia
60 V, 300 m A dual N-channel Trench MOSFET
2. Pinning information
Table 2. Pin 1 2 3 4 5 6
Pinning...
