2N7002T
description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology.
1.2 Features s Logic level threshold patible s Surface-mounted package s Very fast switching s Trench MOS technology
1.3 Applications s Logic level translator s High-speed line driver
1.4 Quick reference data s VDS ≤ 60 V s RDSon ≤ 5 Ω s ID ≤ 300 m A s Ptot ≤ 0.83 W
2. Pinning information
Table 1: Pin 1 2 3
Pinning Description gate (G) source (S) drain (D)
Simplified outline
SOT23
Symbol
D G mbb076 S
Philips Semiconductors
N-channel Trench MOS FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
TO-236AB plastic surface mounted package; 3 leads
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS VDGR drain-source voltage drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS =...
